NanoRun 2016, The IRT Saint Exupéry Nanoscale Runners International Forum

Disruptive GaN & DSM Nanotechnologies

February 23-24, 2016, INP-ENSEEIHT, Toulouse (France)

Committee Chair: Alain Bensoussan (IRT Saint Exupéry)

Location: Amphi B00, INP-ENSEEIHT, 2 Rue Charles Camichel, 31000 Toulouse, France

IRT Saint Exupéry is launching the first Nanoscale Runners International Forum to promote interdisciplinary understanding of Space, Aeronautical, Defence, Nuclear, Transport, Automotive and Telecommunication Systems based on disruptive GaN (Gallium Nitride) & DSM (Deep Submicron) Nanotechnologies. Industrial, commercial, and government endeavors are focused on developing and pulling off high performance and low consumption systems based on nanoscale products operating under harsh environment.

Nanoscale technologies are flooding the entire world and undeniably spreading across the world becoming increasingly pervasive. Nanoscale technology runners such as manufacturers, designers, end-users, or laboratories, are surfing and running on this sphere, pulling and pushing disruptive technologies, moving fast to transform emerging tools and transforming communication networks. This forum wil help them to manage a huge collection of challenges in the nano world now close to quantum world.

The programme will give technical and scientific insights on latest semiconductor technologies as well as challenges brought on scaling node integrated circuits, their reliability behavioral under application in harsh environment and how design for reliability concept will be impacted. Attendees will enjoy exceptional High quality lectures and discussions with Prof. Joseph Bernstein (Ariel University, Israel) and Dr. Alex Lidow (Efficient Power Conversion Corporation, USA).

This forum, the first in a series of annual forums, is designed for electronic engineers, experts, academics, military and defence personnels, and industry leaders.