RADECS is an annual international conference that deals with the radiation effects on electronics devices. It was held from October 19th to November 20th 2020 when Catherine Ngom presented about the characterization of the radiation single-event effects sensitivity of commercial Gallium Nitride (GaN) power components by charge injection with laser pulses.
“A participation in the RADECS is a great way to enhance and promote a work with an international visibility.”
About this presentation
The award for her major and interesting presentation was given for the work presented during the session “Single Event Effects: Devices & ICs”. A participation in the RADECS is a great way to enhance and promote a work with an international visibility.
That is exactly what Catherine was aiming at, and she succesfully achieved her goal when she won a Best Paper and Best Presentation awards.
For the record, her presentation is part of her thesis that is currently in preparation at the Institute of Electronics and Systems (IES) of the University of Montpellier, in collaboration with the Department of Energy Systems, Reliability and Radiation, the MEA Department of the IRT Saint-Exupéry within the FELINE/Lot 2 project team, the ESFR & CNES Laboratories and under the supervision of Doctors Antoine Touboul, Fabio Coccetti and Vincent Pouget.
ABOUT HER THESIS
“It is required to qualify the behavior of components under radiation to determine if they can fulfill their planned mission in a given environment.”
Catherine’s thesis approached a major subject that currently plays a very important role in the space and aeronautics sectors, i.e the “Methodology development using X-rays and pulsed laser for the evaluation of radiation effects in advanced semiconductor components”.
Her thesis is a non-negligeable contribution to the studies that revolve around the research and development of alternative test methodologies. For instance, during her thesis Catherine dedicated her studies to laser and focused X-ray testing of power technologies, such as Gallium Nitride (GaN).
More details about her thesis here.