IRT Saint Exupéry • Technological Research Institute

Accelerating science, technology research & transfers to industry


688 documents

  • Thomas Massena, Corentin Friedrich, Franck Mamalet, Mathieu Serrurier. Fast and Flexible Robustness Certificates for Semantic Segmentation. 2025. ⟨hal-05393092⟩
  • Adeline Fau, Julie Lecomte, Jean-Baptiste Duga, Alain Daidié, Michel Leroy, et al.. Experimental study on macro-slipping in composite single-lap bolted joints with metal inserts. European Journal of Mechanics - A/Solids, 2025, 114, pp.105735. ⟨10.1016/j.euromechsol.2025.105735⟩. ⟨hal-05489190⟩
  • T. Bonneval, M. Lanoy, R. Tanays, L. Sanches, G. Michon, et al.. Dispersion analysis in a 3D lattice elastic waveguide for the design of an absolute filter. Journal of Sound and Vibration, 2025, 617, pp.119314. ⟨10.1016/j.jsv.2025.119314⟩. ⟨hal-05228003⟩
  • Nicolas Boizard, Hippolyte Gisserot-Boukhlef, Duarte M. Alves, André F T Martins, Ayoub Hammal, et al.. EuroBERT: Scaling Multilingual Encoders for European Languages. COLM 2025 - Second Conference on Language Modeling, Oct 2025, Montreal, Canada. pp.1-28. ⟨hal-05226285⟩
  • Bernardo Cougo, Israel Divan, Duc Hoan Tran, Lenin Martins Ferreira M. F. Morais, Vitor Araujo, et al.. Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05369190⟩
  • Duc Hoan Tran, Bernardo Cougo, Rodrigo Drummond, Israel Divan, Gilles Segond. Modeling and measurement of high frequency temperature variation on GaN transistors for inverter and rectifier applications. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323107⟩
  • Thomas Vadebout, Pascal Bevilacqua, Valeria Rustichelli, Maroun Alam, Laurence Allirand, et al.. Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323111⟩
  • Ababacar Diouf, Valeria Rustichelli, Loris Pace, Emmanuel Marcault, Maroun Alam, et al.. Aging of p-GaN gate HEMTs under hard-switching conditions. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323081⟩
  • Mohamed Lemine Dedew, Stéphane Lefebvre, Tien Anh Nguyen, Thanh Long Le, Valeria Rustichelli, et al.. Failure Mechanisms of GaN HEMTs in Single Event Destructive Short-Circuit at Different VDS Voltage Levels. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323097⟩
  • Duc-Hoan Tran, Bernardo Cougo, Rodrigo Drummond, Israel Divan, Gilles Segond. Modeling and measurement of high frequency temperature variation on GaN transistors for inverter and rectifier applications. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05387731⟩

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