The aerospace industry is increasingly committing to the transition toward electrical systems with the goal of reducing emissions and optimizing efficiency.

In this context, and in response to these requirements, Gallium Nitride (GaN) power transistors are emerging as the prime candidates to meet the demanding challenges imposed by the transportation industry. They are particularly notable for their high breakdown voltage, switching speed, and low losses, enabling high power density and superior energy efficiency. It is within this framework that IRT Saint Exupéry conducted the GANRET project through the end of 2025.

GANRET: A foundational project for the mass integration of GaN-based power electronics

The ambition of the project was to enable the mass integration of GaN-based power electronics into electric mobility while guaranteeing high levels of reliability. This four-year project brought together major players from across the entire value chain—from equipment manufacturers to large system integrators, including research laboratories and testing centers: Airbus, Safran, Schaeffler (Vitesco), Thales Alenia Space, STMicroelectronics, Valeo, Wise Integration, AMPERE, IES, LAAS, SATIE, ICAM, Nucletudes, Alter Technology, TRAD, as well as the DGA, CNES, ESRF, and CEA.

Several lines of work were pursued throughout the project:

• Understanding Failure Mechanisms (Physics of Failure – PoF): Studying and analyzing aging and failure modes specific to GaN technologies.
• Development of Adapted Test Procedures.
• Design for Reliability: Establishing design recommendations (Safe Operating Area, derating rules, safety margins, etc.).
• Knowledge Capitalization: Building a dedicated database to consolidate results, particularly reliability models, for the benefit of the entire industrial and scientific community.

GANRET+: A well-initiated successor

Building on the continuity of the GANRET project, the GANRET+ project led by IRT Saint Exupéry and launching in 2026 for a four-year duration aims to deepen the knowledge acquired on GaN technologies for power electronics. It will also focus on studying components more complex than simple discrete devices, such as devices integrating the driver, logic elements, and several GaN transistors within a single package.

GANRET+ will continue the work on reliability, with the objective of adapting and strengthening qualification protocols to meet new architectures and the rapid evolution of the market. A major goal will be to continue and expand reliability studies for both discrete components and more integrated architectures.

Specifically, the project will focus on components that integrate the GaN transistor and its driver within the same package, whether they are:

• System-in-Package (SiP) solutions, combining a silicon driver with GaN transistors,
• Monolithic solutions, integrating control functions directly via a GaN-based driver.

Furthermore, the robustness of GaN components in radiative environments will constitute a core structural pillar of GANRET+.

Leveraging the priority axes identified in GANRET, the new project will also update the portfolio of suppliers and component types studied to keep pace with the evolving GaN ecosystem and remain aligned with industrial needs.

To our knowledge, GANRET and its successor GANRET+ represent the largest and most comprehensive R&T program in Europe focused on the reliability and de-risking of GaN technologies for power electronics.